Nanolayer boron-semiconductor interfaces and their device applications

• Low-saturation current PureB Si diodes with B-deposition from 50 °C to 700 °C. Robust chemical and electrical behavior coupled B-bonding structure at interface. PureGa only Ga wetting layers 400 are electrically similar diodes. A layer before B deposition (PureGaB) gives better robustness than 4-nm-thin PureGaB can be contacted Al while alone Schottky formation. Nanolayers of pure boron (PureB) deposited on form p + -type regions temperatures At °C, commercial photodiodes produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications B-nanolayers have been demonstrated. Attractive diode characteristics were also found devices where wetting-layers applied the surface, both with/without an additional capping-layer. The resulting “PureGa” “PureGaB” assessed here light investigations focused B-Si interface properties very high density acceptor states appears related -dopant property Ga, even though diffusion into is not expected processing ~ 450